INVITED SPEECH | ||
![]() | Barry Linder - Manager, Technology Reliability and Quality, IBM Systems Group, Yorktown Heights, NY The end of gate oxide scaling (for real this time) |
Abstract | |
Gate Oxide Scaling has traditionally been one of the key enablers of performance enhancement from one node to the next. Back in 1999, it was thought that dielectric breakdown would prevent scaling thinner than ~25A. Model improvement, such as progressive breakdown and power law voltage acceleration, supported scaling below 15A. Now with replacement metal gate FinFETs, dielectric breakdown is not preventing further scaling, but rather end of life performance loss due to excessive NBTI. This talk will explore the optimization of gate oxide thickness and end of life performance. | |
Biography | |
Barry P. Linder received his B.S. from Pennsylvania State University in 1993, and an M.S and Ph.D. in electrical engineering from the University of California at Berkeley in 1999. His doctoral thesis dealt with plasma processing, plasma implantation, and plasma charging damage. From 1999-2016, Dr. Linder worked as a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Initially his work centered on the breakdown of ultra-thin gate oxides and he received an “Outstanding Paper Award" at the 2003 International Reliability Physics Symposium. After 2003 his focus changed to electrical characterization and integration of metal gates and high-k materials. During this time he expanded his activities to include all reliability aspects of high-k/metal gate stacks with emphasis on bias temperature instability and dielectric breakdown. More recently, he has added focus on circuit reliability by integrating device level reliability with circuit level functionality, optimizing the trade-off of system performance with system reliability. Since 2016, Dr. Linder has been managing the Technology Reliability and Quality group for IBM Systems, bridging his research and technology background with technology qualification and product reliability. |